Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
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Institution:微电子学院
Title of Paper:Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
Journal:APPLIED PHYSICS LETTERS
First Author:Xue, JunShuai; Zhang, JinCheng; Hao, Yue
Document Code:SCI WOS:000358924200067
Volume:107
Issue:4
ISSN:0003-6951
Translation or Not:No
Date of Publication:2015-01-01
Included Journals:SCI
Date:2018-06-08
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