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Institution:微电子学院

Title of Paper:Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Journal:APPLIED PHYSICS LETTERS

First Author:Xue, JunShuai^Zhang, JinCheng^Hao, Yue

Document Code:SCI WOS:000374313000067

Volume:108

Issue:1

ISSN:0003-6951

Translation or Not:No

Date of Publication:2016-01-01

Included Journals:SCI

Date:2018-06-08