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Title:基于P型GaN漏电隔离层的同质外延氮化镓高电子迁移率晶体管及制作方法

Institution:微电子学院

Scope of Patent:国内

First Author:薛军帅

Type of Patent:Invent

Application Number:CN202110826341.4

Authorization Number:CN202110826341.4

Number of Inventors:10

Service Invention or Not:No

Application Date:2021-07-21

Authorization Date:2022-12-02

Date:2024-07-06